| PART |
Description |
Maker |
| MTM8N60 MTH8N60 MTH8N55 |
(MTH8N55 / MTH8N60) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
Motorola Semiconductor
Motorola, Inc.
|
| SSM5P05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| TPC6101 TPC6.01 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
CONNECTOR ACCESSORY
Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) Notebook PC Applications Portable Equipment Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
| SSM5N05FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM3K03FE |
100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦，1.0 GHz的GOLDMOS场效应晶体管
35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
35 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTF10021 |
30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30瓦，1.4-1.6 GHzGOLDMOS场效应晶体管
30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor
30 Watts, 1.4.6 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
|
| PTF10154 |
85 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor
85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85瓦，1.93-1.99 GHz的GOLDMOS场效应晶体管
85 Watts 1.93-1.99 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
| TPC8401 |
80 AMP MINI-ISO AUTOMOTIVE RELAY
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII)
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U−MOSII)
TOSHIBA Field Effect Transistor Silicon N/ P Channel MOS Type (U−MOSII)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| SSM3K17FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| NDP6020P NDB6020P |
P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管（漏电流-24A, 漏源电压-20V，导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
| 2SK3543 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
|
Toshiba Semiconductor
|
